Frequently bought together:
Description
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
PRODUCT SUMMARY
| VDS (V) | 100 | |
| RDS(on) (L) | VGS = 5.0 V | 0.54 |
| Qg (Max.) (NC) | 6.1 | |
| Qgs (NC) | 2.6 | |
| QGD (NC) | 3.3 | |
| Configuration | Single | |

FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC
Package Includes
1pc x IRL510 Power MOSFET