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Description
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Standard pin-out allows for drop-in replacement
- High current capability
Parametrics
| Parametrics | IRF9530N |
| Budgetary Price | KES 50 |
| ID (@25°C) max | -14 A |
| Mounting | THT |
| Ptot max | 79 W |
| Package | TO-220 |
| Polarity | P |
| QG (typ @10V) | 38.7 nC |
| Qgd | 21.3 nC |
| RDS (on) (@10V) max | 200 mΩ |
| RthJC max | 1.9 K/W |
| Tj max | 175 °C |
| VDS max | -100 V |
| VGS(th) min max | -3 V -2 V -4 V |
| VGS max | 20 V |
IRF5930N P-Channel Power MOSFET
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