Frequently bought together:
Description
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard surface-mount power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Drop-in replacement to existing devices
- High current capability
- Design type: IRF3710.
- Transistor type: MOSFET.
- Control channel type: N-Channel.
- Maximum power consumption (Pd): 79W.
- Maximum discharge source voltage | Vds |: 100V.
- Maximum gate source voltage | Vgs |: 10V.
- Maximum discharge current | Id |: 17A.
- Maximum joint temperature (Tj): 150°C.
- Total gate fee (Qg): 86.7 nC.
- Maximum on-state discharge source resistance (Rds): 0.025 Ohm.
- Operating temperature: -55 to 150°C.
- Foot type: SMD TO-220.
- Transistor type: MOSFET.
- Control channel type: N-Channel.
- Maximum power consumption (Pd): 79W.
- Maximum discharge source voltage | Vds |: 100V.
- Maximum gate source voltage | Vgs |: 10V.
- Maximum discharge current | Id |: 17A.
- Maximum joint temperature (Tj): 150°C.
- Total gate fee (Qg): 86.7 nC.
- Maximum on-state discharge source resistance (Rds): 0.025 Ohm.
- Operating temperature: -55 to 150°C.
- Foot type: SMD TO-220.
1 x IRF530N Power MOSFET N-Channel
