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Logic ICs

IRF530N Power MOSFET N-Channel

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SKU:
PEBTA25V
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Description

Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Drop-in replacement to existing devices
  • High current capability
Specifications
- Design type: IRF3710.
- Transistor type: MOSFET.
- Control channel type: N-Channel.
- Maximum power consumption (Pd): 79W.
- Maximum discharge source voltage | Vds |: 100V.
- Maximum gate source voltage | Vgs |: 10V.
- Maximum discharge current | Id |: 17A.
- Maximum joint temperature (Tj): 150°C.
- Total gate fee (Qg): 86.7 nC.
- Maximum on-state discharge source resistance (Rds): 0.025 Ohm.
- Operating temperature: -55 to 150°C.
- Foot type: SMD TO-220.
 
Package Includes:-
1 x  IRF530N Power MOSFET N-Channel
 
 
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