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Logic ICs

IRF 1405 Power MOSFET Transistor

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SKU:
PEBTA25D
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Description

Features
Manufacturer:International Rectifier
Manufacturer P/N: IRF1405
N channel Power MOSFET
Vdss is 55V and continuous drain current is 169A @ 25C
175°C Operating Temperature
Repetitive avalanche allowed up to Tjmax

Specifications
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage 'Vds': 55 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 169 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 170 nC
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 1210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
Package: TO-220
 
Package Includes:-
1 x IRF 1405 Power MOSFET Transistor 
 
 
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