Frequently bought together:
Description
Features:
- Collector-Emitter Volt (Vceo): 400V
- Collector Current (Ic): 4.0A
- hfe: 8-40 @ 2000mA
- Power Dissipation (Ptot): 75W
- Current-Gain-Bandwidth (ftotal): 4MHz
- Type: NPN
Technical
- Type Designator: E13005-250
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 75 W
- Maximum Collector-Base Voltage |Vcb|: 700 V
- Maximum Collector-Emitter Voltage |Vce|: 400 V
- Maximum Emitter-Base Voltage |Veb|: 9 V
- Maximum Collector Current |Ic max|: 5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 4 MHz
- Forward Current Transfer Ratio (hFE), MIN: 15
- Noise Figure, dB: -
1 x 13005A NPN power transistor
