Frequently bought together:
Description
Specifications
Type: IGBT
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 60
Maximum Collector-Emitter Voltage |Vce|, V: 360
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 35
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 180
Collector Capacity (Cc), typ, pF: 60
Package: TO263
Package Includes
1pc x RJP30H2A 360v Mosfet Transistor
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