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Description
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard surface-mount power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Drop-in replacement to existing devices
- High current capability
Parametrics
| Parametrics | IRF520N |
| Budgetary Price | KES 50 |
| ID (@25°C) max | 9.7 A |
| Mounting | THT |
| Operating Temperature min max | -55 °C 175 °C |
| Ptot max | 48 W |
| Package | TO-220 |
| Polarity | N |
| QG (typ @10V) | 16.7 nC |
| Qgd | 7.3 nC |
| RDS (on) (@10V) max | 200 mΩ |
| RthJC max | 3.1 K/W |
| Tj max | 175 °C |
| VDS max | 100 V |
| VGS(th) min max | 3 V 2 V 4 V |
| VGS max | 20 V |
1 x IRF520N Power MOSFET N-Channel
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Summary of Features
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