K6X4008C1F-BF55 Bit Low Power Full CMOS Static RAM

FEATURES

Process Technology: Full CMOS

Organization: 512Kx8

Power Supply Voltage: 4.5~5.5V

Low Data Retention Voltage: 2V(Min) Three state output and TTL compatible

Package Type: 32-SOP-525, 32-TSOP2-400F/R

The K6X4008C1F families are fabricated by SAMSUNGs advanced full CMOS process technology. The families supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

Power Dissipation Product Family Operating Temperature Vcc Range Commercial (0~70°C ) Industrial (-40~85°C) Automotive /70ns 30µA

Function Write Enable Input Chip Select Input Output Enable Input Address Inputs Data Inputs/Outputs Power Ground

H L I/O Pin High-Z Dout Din Mode Deselected Output disbaled Read Write Power Standby Active

1. X means dont care.( Must be in low or high state.)

Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings 125 °C Unit W °C Remark K6X4008C1F-F K6X4008C1F-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Package Includes

1pc x K6X4008C1F-BF55 Bit Low Power Full CMOS Static RAM