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Description
Features:
| CATEGORY | SPECIFICATIONS |
|---|---|
| Product Type | Silicon Phototransistor |
| Material | Silicon semiconductor |
| Function | Converts light into electrical current (light sensing and switching) |
| Operating Principle | Active region transistor operation triggered by incident light |
| Base Connection | Not used (open base in typical operation) |
| Collector Configuration | Collector biased positive (NPN operation) |
| Reverse Breakdown Voltage | 15 V DC |
| Maximum Working Voltage | 10 V DC |
| Dark Current | ~0.3 µA (current in absence of light) |
| Light Current | 0.5 mA – 1 mA (under illumination) |
| Working Region | Active region (light-controlled current amplification) |
| Key Features | High sensitivity, internal amplification, fast response |
| Signal Output Type | Analog current output proportional to light intensity |
| Applications | Light sensors, optical switches, encoders, IR detection, robotics, automation |
| Advantage | More sensitive than photodiodes due to internal gain |
Package Includes:
1 x Photo transistor 3DU33
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