Logic ICs

Fuse wire is a thin, conductive wire used in electrical fuses as a sacrificial element. Its purpose is to provide overcurrent protection by melting and breaking the circuit in the event of excessive...

Fuse wire is a thin, conductive wire used in electrical fuses as a sacrificial element. Its purpose is to provide overcurrent protection by melting and breaking the circuit in the event of excessive...

Fuse wire is a thin, conductive wire used in electrical fuses as a sacrificial element. Its purpose is to provide overcurrent protection by melting and breaking the circuit in the event of excessive...

Fuse wire is a thin, conductive wire used in electrical fuses as a sacrificial element. Its purpose is to provide overcurrent protection by melting and breaking the circuit in the event of excessive...

Features: CATEGORY SPECIFICATIONS Product Type ESP32 Programming / Development Fixture Board Module Compatibility ESP32-WROVER modules and similar footprint modules Main...

DescriptionUsing Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low...

Description The HT 12E Encoder ICs are series of CMOS LSIs for Remote Control system applications. They are capable of Encoding 12 bit of information which consists of N address bits and 12-N data...

Product Overview The ICL7662CBA+T is a CMOS voltage converter in 8 pin NSOIC package. This is a monolithic charge pump voltage inverter which converts positive voltage in the range of 4.5V to 20V...

DescriptionThe IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

FeaturesManufacturer:International RectifierManufacturer P/N: IRF1405N channel Power MOSFETVdss is 55V and continuous drain current is 169A @ 25C175°C Operating TemperatureRepetitive...

  ParametricsIRF3205 Budgetary Price   KES 50 ID (@25°C)   max 98.0 A Mounting THT Ptot   max 150...

Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon...

Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon...

Specifications Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain Current (Id): 30A Power Dissipation (Ptot): 150W Type: N-Channel Brand/Make:...

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS,...

Specifications Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain Current (Id): 30A Power Dissipation (Ptot): 150W Type: N-Channel Brand/Make:...

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB...

Technical Specifications Model : IRFP140 MOSFET Transistor Material : Yes Polarity : N-CHANNEL Maximum Collector Power Dissipation (Pc) : 180 W Maximum Collector-Base...

IRFZ44N N-Channel MOSFET is a widely used MOSFET transistor designed to use in variety of general purpose applications. The transistor possesses high speed switching capability which makes it...

DESCRIPTION Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness...